Noise Modeling in Lateral Asymmetric MOSFET

In this work the authors present, for the first time, an analytical noise modeling methodology in presence of lateral asymmetry. The authors also show that noise properties of lateral asymmetric (LA) MOSFETs are considerably different from the prediction of conventional Klaassen-Prins (KP) based methods and at low gate voltages; they can overestimate the noise by 2-3 orders of magnitude