Novel Approach to MOS Inversion Layer Mobility Characterization with Advanced Split C-V and Hall Factor Analyses

Parasitic effects and Matthiessen's rule have been reinvestigated in the inversion layer mobility analysis. It is shown that an advanced split C-V technique newly developed is very useful for characterizing the intrinsic inversion layer mobility in short channel MOSFETs, even with very large parasitic effects. Furthermore, the validity of Matthiessen's rule is experimentally and theoretically investigated through Hall factor analysis