Compact Modeling of MOSFETs Channel Noise for Low-Noise RF ICs Design

A compact modeling of MOSFETs channel noise is proposed by considering short-channel effects of deep submicron MOSFETs, such as mobility degradation, hot carrier, bulk charge and channel length modulation effects. The model is only dependent on bias, size and technology of MOSFETs, and hence is suitable for low-noise RF ICs design. Noise parameters of MOSFETs are achieved and good agreement between calculated and measured results is demonstrated