Four-Terminal FinFETs Fabricated Using an Etch-Back Gate Separation

A novel resist etch-back process for fabrication of separated-gate four-terminal FinFETs has been investigates. This process enabled co-fabrication of three-terminal (3T) and four-terminal (4T) FinFETs on a same chip. The fabricated 3T-FinFET shows excellent sub-threshold characteristics and drain induced barrier lowering (DIBL) value whereas the 4T-FinFET provides efficient V
_th
controllability. The effective V
_th
controllability with keeping a small sub-threshold slope has been confirmed in the synchronized double gate (DD) operation mode