Measurement and Modeling of Picosecond Step Response of GaAs MESFETs

The step response of a GaAs MESFET was measured using three techniques. The results were then compared with HP MDS using two nonlinear device models (EEFET3 and Statz-Pucel). Small and large signal TDT measurements give 15 - 50 ps switching times with a small bias dependence, increasing with drain current.