A Pulse Bias/RF Environment for Device Characterization

Characterizing semiconductor devices is often limited by temperature rises within the device under test. These junction temperature rises are a result of the static DC biasing which must be applied to the device before making characterization measurements. Junction temperature increases can distort the measurements or damage the device being tested. This paper describes a technique to characterize semiconductor devices using "bias pulses". When these pulses are properly applied to a semiconductor device, the thermal response of its junction is minimized. In other words, the device's junction temperature remains near the ambient temperature of the devices external environment, even though power is being dissipated in its junction.