Thermal equilibrium electronic properties of a-Si:H

Defect and donor states in a-Si:H are in thermal equilibrium above about 100 degrees C, with concentrations that depend on temperature and the position of the Fermi energy. This interaction between the electronic and structural states has a profound effect on all the electronic properties. Some aspects of the thermodynamic model for the equilibrium state are reviewed and shown to explain the properties of doped and compensated a-Si:H and the temperature dependence of the defect density in undoped material. The different conductivity behavior of the low-temperature frozen state and the high-temperatures equilibrium are also explained.<
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