Three-Dimensional Photodetectors in 3-D Silicon-On-Insulator Technology

We report on the design and measurement results of three-dimensional (3-D) photodetectors in a 0.18-mum silicon-on-insulator technology. The device measurements reported here show that the photodetectors can be used for the design of high-density imaging arrays in 3-D CMOS fabrication processes. The photodiodes respond to light in the range of 1-200 000 lx with currents of 2 fA to 300 pA and can be arranged in a 3-D stack. The phototransistors respond to light intensities of 5-200 000 lx with currents from 50 fA to 2.3 muA