Voltage Acceleration of TBD and Its Correlation to Post Breakdown Conductivity of N- and P-Channel MOSFETs

The gate oxide breakdown behavior of advanced n- and p-channel CMOS devices was thoroughly investigated from the time range of electrical overstress events (mus) to package level test conditions (10
⁶
s). The voltage acceleration follows the power-law-model over 12 decades in time. In addition the current-voltage driven wear out was studied for linear and non-linear driver elements. It was found that the evolution of the post breakdown conductivity strongly depends on the current limitation and the associated voltage drop across the driving stage. The post breakdown evolution can be described by the intrinsic voltage acceleration model