FET model taking into account wave characteristics of the active region and input circuits

A new wave model for the field effect transistor (FET) is suggested. Each element of FET layout, including input circuits, is associated with the element of an equivalent circuit. FET input region includes two parts: variable cross-section microstrip and coplanar lines and a T-junction. Detailed investigation of the influence of input circuits on FET characteristics has been performed. Approximation of transfer characteristics of the input region by those of an idealized T-junction results in substantial distortion of FET transfer coefficient.<
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