A correlation study between different types of CDM testers and "real" manufacturing in-line leakage failures

Charged device model (CDM) tests generated ESD failures that correlated closely to assembly/test manufacturing in-line leakage failures. Both the "field induced noncontact" and "socketed" CDM testers correctly identified the weakest pins in a 0.8-/spl mu/m CMOS technology device. A correlation of the initial fail voltage was found between the different field-induced CDM testers and the eight weakest pins. Similar CDM-tests found a weak pin to pin correlation between the two different socketed CDM testers.<
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