Super low noise AlGaAs/GaAs HEMT with one tenth micron gate

Low-noise AlGaAs/GaAs HEMTs (high-electron-mobility transistors) with a 0.1- mu m gate length have been developed. State-of-the-art low noise figures of 0.51 dB and 1.9 dB were obtained at 18 GHz and 40 GHz at room temperature, with associated gains of 10.8 dB and 5.3 dB, respectively. This performance has been achieved by shortening the gate length to 0.1 mu m and also by lowering the gate resistance drastically with a T-shaped gate structure. The effects of gate length and gate resistance on microwave performance are experimentally shown.<
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