Effects of gate recess etching on source resistance

Recessed gate microwave MESFET's and MODFET's have a recessed but unmetallized length L/sub /spl delta// of the channel adjacent to the gate, whose resistance R/sub /spl delta// can significantly contribute to the source resistance R/sub s/. The ratio R/sub /spl delta///R/sub s/ can be determined using common test structures.<
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