Device implications of enhanced diffusion caused by the electrical deactivation of arsenic

In this paper, we present experiments designed to show that electrical deactivation of arsenic enhances the diffusion of dopants for implanted arsenic or arsenic in-diffused from polysilicon. Results show a clear enhancement of diffusion in a nearby boron layer as well as an enhancement for the arsenic itself. Simulations and device measurements reveal this can have a considerable effect on the electrical characteristics of bipolar transistors.<
>