A 3.6 GHz dual modulus prescaler IC using optimal pseudomorphic HEMT structure on Si substrates

A dual modulus divide-by-128 or 129 prescaler IC was fabricated using 0.35 /spl mu/m gate-length HEMT DCFL technology on a Si substrate. We optimized the HEMT epitaxial structure so that it consisted of a Si-doped InAlGaAs-AlGaAs (5/5 nm) strained layer superlattice (SLS), an InGaAs pseudomorphic channel layer, an SLS buffer layer and a GaAs buffer layer grown by MOVPE. Our prescaler IC on a Si substrate gives 3.6 GHz/9.8 mW at a supply voltage of 1.5 V.<
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