A novel embedded SRAM technology with 10-/spl mu/m/sup 2/ full-CMOS cells for 0.25-/spl mu/m logic devices

Am embedded SRAM technology for 0.25 /spl mu/m logic LSIs is described. The key of the technology is a single-level local interconnect with a TiN film. The local interconnect wires driver and load's drains, and input gate of the counterpart inverter besides. We achieved 10-/spl mu/m/sup 2/ full CMOS SRAM cells by the technology.<
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