Enhanced MCM-C package performance by formation of improved 3-D interconnections

The authors introduce an improved 3-D interconnection fabricating technology which uses an electron beam to generate surface trenches in green ceramic sheets for the interconnection wirings. The electron beam is capable of generating narrow lines as well as high-density wiring patterns. Electron-beam-formed line cross-sections (line width and thickness) can be adjusted for electrical performance optimization. CMOS and ECL (emitter coupled logic) drivers require different optimized transmission line characteristics for high-performance digital systems. It is shown how the interconnection's cross-sectional dimensions can be controlled by electron-beam machining. Computer simulation results on the range of electrical characteristics achievable in these interconnects as the line space and line cross-section are varied are shown.<
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