Test results on double sided readout silicon strip detectors

Several 5*5 cm/sup 2/ double-sided readout silicon strip detectors have been fabricated using planar technology. Electrical characteristics (I-V and C-V curves interstrip resistance versus bias voltage) have been measured. Some detectors have been tested with a scanning electron microscope to investigate defects due to the fabrication process. A few of them have been tested with a beta source and with a 50-GeV electron beam. A strong correlation is observed between charges collected on the ohmic side and on the junction side. Preliminary results on capacitive charge division studies are also presented.<
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