Junction-isolated CMOS for high-temperature microelectronics

Latchup susceptibility over a temperature range of 25-315 degrees C for variations on a 1.2- mu m CMOS process is studied. A special high-performance process, including all refractory metallization, thinner epi, and higher doping levels, resulted in metal-migration immunity and doubling of the latchup holding voltage and current at 300 degrees C.<
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