On the performance limit for Si MOSFET's: experimental study

Short-channel MOSFETs fabricated by direct-write electron-beam lithography have been examined with regard to parameters such as channel length, oxide thickness, and substrate doping concentration. A simple relationship between channel length and transconductance in the saturated region has been derived from the experimental results, and the performance of MOSFETs with zero channel lengths has been evaluated as a function of oxide thickness. The ultimate performance of MOSFETs with both zero channel length and zero oxide thickness has been estimated to be about 3000 mS/mm. This limitation is attributed to the saturation velocity and the finite inversion layer thickness. The electron saturation velocity in the inversion layer has been confirmed experimentally to be 1.0*10/sup 7/ cm/s.<
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