Measured DC performance of large arrays of silicon field emitters

Large arrays of silicon field emitters are being produced at MCNC for use in RF and microwave amplifiers and other high-intensity electron beam source applications. Significant levels of both total emitted current (up to 7 mA) and current density (7 A/cm/sup 2/) are obtained using gate electrode potentials less than 250 V with emission efficiencies as high as 99%. Large arrays of field emitters are operated at 100% duty cycle for over 18 hours. Data from devices with 1197 and 232 630 tips are presented, along with electrical yield statistics for arrays of other sizes.<
>