Demonstration of a p-channel BICFET in the Ge/sub x/Si/sub 1-x//Si system

Operational bipolar inversion-channel field-effect transistors (BICFETs) based on the Ge/sub x/Si/sub 1-x//Si system are discussed. The 300 K current gain of beta =365 at a current density of J/sub c/=2.5*10/sup 4/ A/cm/sup 2/ is the highest value reported for any BICFET to date. The use of a double-heterojunction inversion channel eliminates the collector offset voltage. The present devices are limited by the channel resistance, so that performance improvements are expected for laterally-scaled-down devices.<
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