Symmetric self-electro-optic effect device using symmetric-cavity quantum well electroabsorption modulators

We report results obtained from a symmetric-cavity Fabry-Perot quantum well modulator in GaAs/AlGaAs. A reflection-change of /spl ap/46% with an insertion loss of 1.3 dB are obtained in the normally-off mode under a reverse bias voltage of 7.5 V. Bistable operation is demonstrated, for the first time using such devices, by connecting two modulators in the symmetric self-electro-optic effect device configuration.<
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