Characterization of single quantum wells on GaAs/Si grown by metalorganic chemical vapor deposition

The use of Al/sub 0.5/Ga/sub 0.5/As/Al/sub 0.55/Ga/sub 0.45/P intermediate layers and in-situ thermal cycle annealing are shown to be effective in obtaining smooth and sharp heterointerfaces for Al/sub 0.3/Ga/sub 0.7/As/GaAs single quantum wells (SQWs) grown on Si substrates, as a result of an initial two-dimensional growth and a reduction in threading dislocation density. The best lasing characteristics are obtained in Al/sub 0.3/Ga/sub 0.7/As/GaAs SQW laser diodes fabricated using the above structure in comparison to those fabricated using the more conventional two-step growth technique.<
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