The effect of channel boron implants on electron mobility in NMOSFET's

The Hall mobilities and Hall concentrations of channel electrons in boron-implanted NMOSFETs were measured at 77 and 300 K. At both temperatures, the mobilities were found to decrease with increasing implantation dose (10/sup 11/-10/sup 12/ cm/sup -2/) only for electron concentrations <2*10/sup 12/ cm/sup -2/, the effect being more pronounced at 77 K. It is suggested that the mobility degradation is mainly due to impurity scattering.<
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