High-temperature operation of InGaAs/InGaAsP compressive-strained QW lasers with low threshold currents

We investigated the influence of the band gap wavelength of barrier layers and separate confinement heterostructure (SCH) layers lambda /sub SCH/ on the high-temperature operation of InGaAs/InGaAsP compressive-strained quantum-well (QW) lasers. The optimum lambda /sub SCH/ was 1.2 mu m, at which carriers were sufficiently confined into quantum wells. The QW laser with lambda /sub SCH/ = 1.2 mu m exhibited low threshold currents of 2.3 mA at 20 degrees C and 9.7 mA at 100 degrees C and CW lasing up to 150 degrees C.<
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