The effect of an SiO/sub 2/ buffer layer on the SAW properties of ZnO/SiO/sub 2//GaAs structure

The effect of an SiO/sub 2/ buffer layer on the surface acoustic wave (SAW) properties of ZnO/SiO/sub 2//GaAs structure is examined. Both theoretical and experimental results show that the coupling coefficient is increased appreciably by providing an SiO/sub 2/ film between the ZnO film and the GaAs substrate. Adding an SiO/sub 2/ film is also beneficial to the promotion of quality of ZnO thin film. The results could be useful for the further development of monolithic SAW devices.<
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