OMCVD grown AlInAs/GaInAs HEMTs with AlGaInP Schottky layer

A novel AlInAs/GaInAs HEMT (high electron mobility transistor) with an AlGaInP Schottky layer is reported. In addition to excellent AC performance, the gate leakage and breakdown characteristics have been significantly improved. The AlInAs/GaInAs HEMT structures were grown by low-pressure OMCVD (organometallic chemical vapor deposition). The results obtained indicate that AlGaInP is an excellent candidate as a Schottky layer for InP-base HEMTs.<
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