Hooge fluctuation parameter of semiconductor microstructures

The Hooge 1/f fluctuation parameter alpha /sub H/ of a mesoscopic n-GaAs filament is studied experimentally and compared with that derived from the quantum model. The minimum value of the Hooge parameter alpha /sub H/ was 2*10/sup -6/ and 1*10/sup -8/ at room temperature and 60 K, respectively. The temperature dependence of alpha /sub H/ below 100 K and the electric field dependence at 77 K are favorably compared with those obtained for the impurity scattering fluctuation of the quantum 1/f noise theory.<
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