A low-frequency noise study of gate-all-around SOI transistors

The low-frequency noise characteristics of both n- and p-type gate-all-around (GAA) SOI MOS transistors are reported and compared with the noise behavior of conventional, partially depleted (PD) SOI transistors. It is shown that the input-referred noise of n-channel GAA transistors is considerably lower than for standard ones, which is related to the higher device transconductance, coupled to the occurrence of volume inversion, P-channel devices have a one order of magnitude lower noise spectral density than n-MOSTs, which is due to the corresponding lower density of interface traps. GAA p-MOSTs tend to have a lower average noise in weak inversion than their standard-SOI counterparts. In strong inversion, the reverse situation is often found. Finally, it is shown that in n-type GAA transistors no kink-related excess noise is observed, which is an additional benefit for using this type of SOI technology.<
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