Self-aligned silicided inverse-T gate LDD devices for sub-half micron CMOS technology

A nitride-sealed L-shaped Si spacer technique is used to form inverse-T gate sub-half micron N- and P-LDD (lightly doped drain) device structures with self-aligned Ti silicided gate and source-drain. The advantage of the L-shaped Si spacer N-LDD devices over the L-shaped nitride spacer devices is to extend the gate electrode so that it fully overlaps the N/sup +/ S/D region, which provides (1) higher current drive due to a reduction of series resistance with an increased carrier concentration at the LDD region and (2) less degradation during hot carrier aging due to a reduction of maximum lateral electric field and greater tolerance to higher trapped charges.<
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