Control of Fe-precipitates in Fe-doped InP

An attempt has been made, on the basis of the three-levels model and considerations relative to the existence of interstitial atoms, to correlate the resistivity of InP crystal with the Fe weight fraction and the background concentration of the polycrystalline InP used as the starting material for growing semi-insulating crystals with low Fe concentration. The calculated and experimental results are in good agreement. The correlation between Fe weight fraction and solidified InP that is free of Fe-precipitates was obtained experimentally.<
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