A study of carrier sweep-out in biased MQW p-i-n structures using time-resolved photoluminescence

Time-resolved photoluminescence measurements are taken as a function of bias-voltage for MQW p-i-n diodes with different barrier thicknesses and mesa sizes. The two devices studied had different barrier thicknesses and were on standard S-SEED and L-SEED chips. The former device consists of 60.5 periods of 100 AA GaAs wells and 65 AA Al/sub 0.3/Ga/sub 0.7/As barriers whilst the latter consists of 70.5 periods of 100 AA GaAs wells and 35 AA Al/sub 0.3/Ga/sub 0.7/As barriers.<
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