GaAs 850 nm modulators solder-bonded to silicon

GaAs/AlGaAs p-i-n multiple-quantum-well modulators solder-bonded to a silicon substrate are reported. The GaAs substrate is then chemically removed to allow operation at 850 nm. The gold contact to the modulator is used as the reflector. A change in reflectivity from 26% to 52% is achieved for a 0 to 10 V bias swing. The device has a modulation saturation intensity of 80 kW/cm/sup 2/, demonstrating superb heat-sinking and ohmic contact. The hybrid was cycled from 30 degrees C to 100 degrees C over a 100 times, and it showed no degradation, exhibiting the practicality of the technique.<
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