Ga/sub 0.47/In/sub 0.53/As enhancement- and depletion-mode MISFETs with very high transconductance

GaInAs metal-insulator-semiconductor field-effect transistors (MISFETs) have been fabricated on metalorganic vapor-phase-epitaxy (MOVPE) grown GaInAs layers. Enhancement-type MISFETs exhibit very high transconductances of 300 and 250 mS/mm for gate lengths of 1.5 and 3 mu m, respectively. The effective channel mobility is 5800 cm/sup 2/ V/sup -1/ s/sup -1/. The saturation velocity is 3.5*10/sup 7/ cm/s. High-frequency measurements performed on 3- and 1.5- mu m-gate-lengthdevices result in a current gain cutoff frequency of 6 and 14 GHz, respectively.<
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