The effect of interface and alloy quality on the DC and RF performance of Ga/sub 0.47/In/sub 0.53/As-Al/sub 0.48/In/sub 0.52/As HEMTs

Ga/sub 0.47/In/sub 0.53/As-Al/sub 0.48/In/sub 0.52/As high-electron-mobility transistors (HEMTs) were fabricated in materials with varying degrees of alloy and interface disorder. The conductivities of the epitaxial layers are highest for material with the smallest amount of interface roughness and lowest for samples with poor-quality interfaces. The transconductances and unity current gain cutoff frequencies of the fabricated devices with 0.2- mu m gates are similarly affected.<
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