Modeling deep-level trap effects in GaAs MESFETs

Modeling and numerical simulation have been performed to investigate the effects of deep-level-traps (DLTs) on the device characteristics of a GaAs MESFET (metal-semiconductor field-effect transistor). A simplified but realistic model of recombination-generation through DLTs is introduced into the current continuity equations, from which the space-charge contribution of DLTs in Poisson's equation is also determined. The effects of DLTs on the basic device performance as well as the backgating effect and hysteresis of drain current are analyzed in terms of ionization type, density, and position of the DLT in a two-dimensional numerical simulation.<
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