Characteristics of bilateral MOS-controlled thyristors (BMCT)

The operation of the continuous-gate-control BMCT and the interrupted-gate-control BMCT is described and compared. Particular attention is focused on the analysis of the turn-on and turn-off characteristics. The result provides useful guidelines for designing these devices. Parameters such as the minimum MOS gate voltages required for turn-on and turn-off and the maximum controllable current are analytically derived and experimentally verified. Switching tests using fabricated devices indicate that BMCT is capable of handling current exceeding 800 A/cm/sup 2/ with a turn-off time less than 1 mu s for discrete devices.<
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