A monolithic L-band limiting amplifier and dual-modulus prescaler GaAs integrated circuit

Fabrication details, radio-frequency (RF) yield results, and RF performance vs. temperature results are presented for an emitter-coupled-logic (ECL)-compatible L-band, limiting dual-modulus (/10/11) prescaler. This process for monolithic integration of analog and digital circuit functions uses refractory-self-aligned-gate FET technology. When tested with -22 dBm input signal power, one lot of six wafers had a total RF chip yield of 19%, with a best-wafer yield of 43%. The average operating frequency was 1.45 GHz (standard deviation (SD)=51 MHz) with an average power dissipation of 696 mW (SD=23 mW).<
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