A dual-port DRAM component for a digital RF memory

The design and testing of a dual-port dynamic memory component for a digital radio frequency memory (DRFM) are described. The use of dynamic memory allows for greater storage capacity than the static memory. In addition, the dual-port nature of the memory allows for access by an external processor. The external processor may be used for signal processing applications such as parameter extraction. Several memory cell implementations were evaluated, and the three-transistor memory cell was selected. The cell was then modified for dual-port operation. Supporting circuitry such as address decoders and sense amplifiers was also designed. The component was simulated using both a high-level language (VHDL) and circuit descriptions (SPICE). A 32-word by 8-b memory was fabricated and tested to insure the validity of the design.<
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