1/2-in 768(H)*492(V) pixel CCD image sensor

A sensor with unit cell dimensions as small as 8.4(H)*9.8(V) mu has been developed. In order to realize such a high-density device, the following technologies have been developed: (1) dual-channel horizontal CCD registers, (2) single p-well vertical overflow drain, (3) high-capacitance p-well structure, and (4) inverted-LOCOS channel isolation process. A horizontal resolution of more than 500 TV lines has been obtained. Maximum signal charge for the vertical CCD register is as much as 1.5*10/sup 5/ electrons, corresponding to 270-nA output current, in spite of a narrow-channel vertical CCD register with a mask width of only 1.8 mu m. The total random noise is less than 20 electrons after correlated double sampling. The dynamic range reaches 77 dB, and the photosensitivity is 0.092 mu A/ mu W. Experimental results also show that the technologies used here are effective for realizing a high-definition CCD image sensor for future use.<
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