Source inductance effects on high speed switching of power MOSFETs

In this paper, investigations into the effect of source inductance on the switching speed of the TO3 packaged 500 V, 12 A power MOSFET are reported. The use of the kelvin contact to increase switching speed of TO220 packaged, current sensing MOSFETs is analysed and the failure mode of such devices, when used in a high frequency inverter, investigated. Finally, the results of high speed switching tests performed on an RF packaged power MOSFET are detailed.<
>