A comparison of internal heating and temperature distribution in IGBT and DMOS devices

Local heating effects are simulated for both types of transistor, by solving the current continuity and Poisson equation fully in 2-Dimensions and calculating local heating from the resulting Current Density and Electric Field. The effect of Generation-Recombination heating is also included and compared with the case where this is not significant. Finally this heat-source term is used in the solution of the Heat Equation in order to find the steady state temperature distribution. It is found that strong local heating effects occur in both devices with apparent cooling occurring in some regions where recombination has been ignored, which may have a beneficial effect on the locally heated regions.<
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