Ge/Si (100) heterojunction photodiodes grown by low-energy plasma-enhanced CVD

Here we present results on heterojunction p-i-n photodiodes grown by Low-Energy Plasma-Enhanced CVD (LEPECVD). In a LEPECVD reactor the relatively thick Ge layers, required in NIR detectors, can be deposited in a few minutes at temperatures fully compatible with the CMOS process, making such deposition method appealing for this application.