High quality ion implanter; EXCEED3000AH-Nx for 45nm beyond I/I process

For the 45nm beyond advanced LSI mass-production, accurate dose and beam angle control for the implantation process is highly required. For the purpose the ion beam size and angle monitor was developed and installed in EXCEED3000AH new version medium current ion implanter.. The measured results shows the beam size and angle increased at the beam energy decreased, especially for the Y direction beam divergence is severe. As the solution, further development items are present.