A Complementary RF-LDMOS Architecture Compatible with 0.13 μm CMOS Technology

In this paper, we present a modular and reliable complementary RF LDMOS (laterally diffused MOS) architecture fully compatible with a 0.13 mum CMOS platform. We demonstrate BV
_DS
*f
_T
values up to 560 and 210 GHzV, respectively, for N- and PLDMOS transistors. A major advantage of the proposed process flow is that the drift region of N- and PLDMOS transistors can be independently optimized for different BV
_DS
without affecting the V
_T