Interface trap density energy profiles D/sub it/(E) in fully depleted SIMOX MOSFET's by dynamic transconductance

The dynamic transconductance technique is refined and used to obtain D/sub it/(E) profiles covering much of the forbidden gap (from accumulation to depletion and weak inversion) of both (front and back) interfaces of a number of SIMOX (separation by implanted oxygen) chips as a function of SIMOX preparation and transistor fabrication technology and geometry. Typical results are shown which demonstrate the well-behaved bell shape G/sub p// omega vs. omega experimental curves obtained both under 'direct' and 'cross' measurement conditions, leading to U-shape D/sub it/(E) profiles. D/sub it/(E) values range from mid 10/sup 10/ to mid 10/sup 11/ cm/sup -2/ eV/sup -1/ for the front interface, and about one order of magnitude higher for the back interface.<
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