A single-sided PHINES SONOS memory featuring high-speed and low-power applications

A single-sided PHINES SONOS memory with hot-hole injection in program operation and Fowler-Nordheim (FN) tunneling in erase operation has been demonstrated for high program speed and low power applications. High programming speed (/spl Delta/V
_T
/program time) of 5 V/20 μs, low power consumption of P/E, high endurance of 10 K, good retention, and scaling capability can be demonstrated.