Use of a Small Lattice Mis-Matched Metamorphic Substrate to Extend the Wavelength Range of a Broadband, Polarization Insensitive Semiconductor Optical Amplifier

An InAs
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metamorphic substrate is used to increase the long-wavelength range of tensile strained quantum-wells used in polarization-insensitive semiconductor optical amplifiers. The peak emission of the amplified spontaneous emission occurs on the light-hole sub-band at wavelength longer than 1640 nm. In addition, the metamorphic substrate reduces the degree of lateral composition modulation seen by tensile strained semiconductor materials grown by molecular beam epitaxy