Second-harmonic characterization of Si/Hf(/sub 1-x/)Si/sub x/O/sub 2/ interfaces

We present a second-harmonic generation study of a set of device quality Si/Hf(/sub 1-x/)Si/sub x/O/sub 2/ interfaces for different x values and annealing treatments. Rotationally-anisotropic, spectroscopic and time-dependent SHG depend strongly on dielectric composition and annealing.